201610445394.0, filed on Jun. 13, 2017, 2 pages. In the present disclosure, there is further disclosed usage of the aluminum oxide polishing solution in the field of sapphire wafer polishing. Lave o contedo da pasta DUE e ento aplique, de igual modo, a pasta UNO. Pastas de polimento base de xido de alumnio de granulao 60 microns (pasta UNO) e 20 microns (pasta DUE). Co., Ltd. First Office Action (including English translation) issued in corresponding Chinese Patent Application No. Preferably, in step 3), the modified aluminum oxide is washed before grinding. Make up a solution using 4 g silane coupling agent KH792 (also known as N-(2-aminoethyl)-3-aminopropyltrimethoxysilane), 14.4 g ethyl alcohol, 1.6 g water; at a constant temperature of 80 C., stir and hydrolyze for half an hour to form a hydrolysate; under the condition of heating and stirring, adding the hydrolysate into 25 g aluminum oxide power with a particle size of 0.04-2 m; stirring while heating at 100 C., till the liquid is almost completely volatized; completely volatize the liquid with the remaining heat, thereby obtaining a modified aluminum oxide; wash and centrifuge the modified aluminum oxide, and grind it into particle size of 200-400 nm; disperse the ground modified aluminum oxide powder into water, and regulate the pH to 10.00 using 2 mol/L potassium hydroxide; continue stirring for 1 hour to obtain a 5 wt % aluminum oxide polishing solution. Preferably, in step 2), the aluminum oxide includes -aluminum oxide. The examples are implemented under the precondition of the technical solution of the present disclosure and provide detailed embodiments and specific operation procedures; however, the protection scope of the present disclosure is not limited to the examples below. As shown in the Examples and effect data that when other conditions were all identical, the polishing solution formed by the modified aluminum oxide in the present disclosure at a pH=10 may achieve the polishing effect and polishing rate that were achieved by a normal aluminum oxide polishing solution at a pH=13; therefore, the present disclosure greatly enhances the productivity efficiency, and avoids damaging a machine stand by a high-pH value polishing solution; therefore, the present disclosure facilitates mass industrial production. Com auxlio de um disco de feltro acoplado em baixa rotao, friccione a pasta nas superfcies fazendo movimentos circulares com pouca presso. Preferably, in step 1), with a total weight of the hydrolysate as a reference, the silane coupling agent is in an amount of 15-25 wt %, the ethyl alcohol is in a an amount of 67-77 wt %, and the water is in a an amount of 3-13 wt %. 23, 2017, 11 pages. Indicaes: Seque a superfcie a ser polida, mantendo os dentes isolados (isolamento relativo). 201610445394.0, dated Jun. PATENTED CASE, Free format text: The present disclosure relates to a field of a polishing solution, and specifically relates to a method of preparing an aluminum oxide polishing solution. The polished sapphire sheet was ultrasonically washed for 10 minutes in a washing liquid and then blown dry with nitrogen gas. In order to achieve the above and other objectives, the present disclosure is implemented through a technical solution below: A method for preparing an aluminum oxide polishing solution, comprising: 1) mixing a silane coupling agent, ethyl alcohol, and water to form a hydrolysate; 2) under a condition of heating and stirring at a temperature between 95 C. and 110 C., adding the hydrolysate into aluminum oxide powder, keeping stirring while heating, till liquid is completely volatilized, thereby obtaining a modified aluminum oxide; 3) grinding the modified aluminum oxide into powder and dispersing the powder into water, and adjusting the solution pH to 9.5-10.5, thereby obtaining the aluminum oxide polishing solution. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Make up a solution using 17 g silane coupling agent KH792 (also known as N-(2-aminoethyl)-3-aminopropyltrimethoxysilane), 70 g ethyl alcohol, 13 g water; at a constant temperature of 80 C., stir and hydrolyze to form a hydrolysate; under the condition of heating and stirring, adding the hydrolysate into 25 g aluminum oxide power with a particle size of 0.04-2 m; stirring while heating at 100 C., till the liquid is almost completely volatized; completely volatize the liquid with the remaining heat, thereby obtaining a modified aluminum oxide; wash and centrifuge the modified aluminum oxide, and grind it into particle size of 200-400 nm; disperse the ground modified aluminum oxide powder into water, and regulate the pH to 10.00 using 2 mol/L sodium hydroxide; continue stirring for 1 hour to obtain a 5 wt % aluminum oxide polishing solution. ); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY. Hereinafter, the aluminum oxide polishing solution polishing experiment and surface roughness experiment are also provided below: Use 500 g aluminum oxide polishing solution prepared according to Examples 1-5 for polishing a C-phase sapphire wafer. Method for preparing an aluminum oxide polishing solution, Application filed by Shanghai Xinanna Electronic Technology Co Ltd, Shanghai Xinanna Electronic Technology Co Ltd, Assigned to Shanghai Xinanna Electronic Technology Co., LTD, SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES, Shanghai Xinanna Electronic Technology Co., LTD. ); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY, Comparison Results of Polishing Experiments, A kind of preparation method of alumina polishing solution, Quaternized spherical alpha-alumina @ gamma-alumina composite abrasive particle and preparation method thereof, Flexible bonded abrasive articles, methods of production and use, Surface-modified pyrogenically produced aluminum oxide, Polishing material composition and polishing method for polishing LSI devices, LSI device polishing composition and method for reproducing LSI device, Silane containing polishing composition for CMP, Method for coating metal surfaces with an aqueous, polymer-containing composition, said aqueous composition and the use of the coated substrates, Method for coating metallic surfaces with an aqueous composition, the aqueos composition and use of the coated substrates, Cerium-based abrasive abrasive and abrasive material slurry, and method for producing cerium based abrasive material, Granules based on pyrogenically produced aluminium oxide, their production process and use, Aqueous base nano diamond polishing liquid and manufacture method thereof, Bristle material for polishing brush and polishing brush, Abrasive grain for polishing material, and polishing material, Abrasive tool including agglomerate particles and an elastomer, and related methods, Compositions comprising silane modified metal oxides, Nanometer polishing solution used for microcrystalline glass and preparation method thereof, Surface modified nano-abrasive silicon slice polishing liquid, Composition and method for polishing molybdenum, Method for culturing oil-producing microalgae by using brewery sewage, Linear nano silica sol and preparation method thereof, Chemically mechanical polishing solution containing composite milling material, Alumina-based chemical mechanical polishing slurry, Method for preparing alumina polishing solution, Cerium-based abrasive material and abrasive material slurry, and method for producing cerium based abrasive material, Silicon wafer with grinding composition and silicon wafer grinding method, Cerium oxide abrasive and method for polishing substrate, Composition for polishing and polishing method, Polydisperse large-particle-size silica sol and method of preparing the same, Method for manufacturing polishing slurry excellent in distribution stability, Cmp abrasive, and polishing method using the same, Abrasive grain and method for producing abrasive, A slurry for color photoresist planarization, Cmp polishing liquid and polishing method using the same and fabricating method of semiconductor substrate, Polishing composite-oxide particle and slurry abrasive, Sapphire chemical mechanical polishing solution and preparation method thereof, A kind of preparation method of CMP planarization liquid, Abrasive and method for polishing substrate, Polishing composition for polishing semiconductor wafer edge, and polishing machining method, Method for preparing cerium oxide for high-accurate polishing, A polishing composition for polishing a wafer edge, a method for manufacturing the same, and a polishing method, A kind of SiC single crystal piece essence throwing water base polishing fluid and preparation method thereof, Polishing slurry for oxide single crystal substrate and method for producing the same. The present application claims the benefit of Chinese Patent Application No. Preferably, in step 2), the weight of the aluminum oxide powder is 3-7% of the hydrolysate weight. It has been verified that with the aluminum oxide polishing solution in the technical solution of the present disclosure, it may achieve a polishing efficiency at a pH of 9.5-10.5, which would be achieved by a conventionally unmodified aluminum oxide polishing solution at a pH=13.00. electrolytic etching, With simultaneous mechanical treatment, e.g. SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION, Free format text: SHANGHAI XINANNA ELECTRONIC TECHNOLOGY CO., LTD, C, Free format text: Make up a solution using 25 g silane coupling agent KH792 also known as N-(2-aminoethyl)-3-aminopropyltrimethoxysilane), 67 g ethyl alcohol, 8 g water; at a constant temperature of 75 C., stir and hydrolyze to form a hydrolysate; under the condition of heating and stirring, adding the hydrolysate into 25 g aluminum oxide power with a particle size of 0.04-2 m; stirring while heating at 95 C., till the liquid is almost completely volatized; completely volatize the liquid with the remaining heat, thereby obtaining a modified aluminum oxide; wash and centrifuge the modified aluminum oxide, and grind it into particle size of 200-400 nm; disperse the ground modified aluminum oxide powder into water, and regulate the pH to 9.50 using 2 mol/L potassium hydroxide; continue stirring for 1 hour to obtain a 3 wt % aluminum oxide polishing solution. -aluminum oxide (-Al. coated particles, SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR, Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof, Manufacture or treatment of semiconductor devices or of parts thereof, Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g.